▎ 摘　　要

NOVELTY - The method involves preparing silicon component substrate. The graphene layer is formed on substrate. A silicon carbide layer is formed on the graphene layer. USE - Substrate manufacture method for nitride single crystal growth. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) method of fabricating nitride compound semiconductor luminance device; and (2) nitride semiconductor light emitting diode. DESCRIPTION OF DRAWING(S) - The drawing shows the sectional views illustrating the substrate manufacture method.(Drawing includes non-English language text)