▎ 摘　　要

NOVELTY - The method involves cleaning a silicon carbide wafer to remove pollutant on a surface, and heating to 1200-1300 degrees centigrade at a constant temperature time of 30-90 minutes. A carbon film is deposited on a copper film at a flow speed of 30-150 ml/min and annealed at 900-1200 degrees centigrade for 10-20 minutes when the carbon film is attached to the copper film on the formed graphene nanometre belt, such that the belt is conneceted to the open copper film. USE - Graphene nanometer belt preparing method for manufacturing a semiconductor device. ADVANTAGE - The method enables preparing the belt in a simple and safe manner with reduced injection region, smooth surface and better continuity. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of a graphene nanometer belt. '(Drawing includes non-English language text)'