• 专利标题:   Copper-based thin metal film useful for a catalytic metal for synthesizing graphene, comprises silver.
  • 专利号:   WO2013081302-A1, KR2013060005-A, CN103958730-A, CN103958730-B, KR1900758-B1
  • 发明人:   YOON J, NA D, SONG Y, WON D, YOON J H, NA D H, SONG Y I, WON D K, YUAN D
  • 专利权人:   SAMSUNG TECHWIN CO LTD, HANWHA TECHWIN CO LTD, HANWHA AEROSPACE CO LTD
  • 国际专利分类:   C01B031/02, C23C016/06
  • 专利详细信息:   WO2013081302-A1 06 Jun 2013 C23C-016/06 201342 Pages: 16 English
  • 申请详细信息:   WO2013081302-A1 WOKR008858 29 Oct 2012
  • 优先权号:   KR126273, CN80058356

▎ 摘  要

NOVELTY - A copper-based thin metal film to be used for a catalytic metal for synthesizing graphene, comprises 0.001-0.05 wt.% silver. USE - The copper-based thin metal film is useful for a catalytic metal for synthesizing graphene (claimed). ADVANTAGE - The copper-based thin metal film can be efficiently used for synthesizing graphene of high quality, which is uniform and of which a surface resistive characteristic is improved. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is a method of manufacturing graphene, comprising: preparing a copper-based thin metal film which includes silver of 0.001-0.05 wt.% and of which an average size of each of copper grains is at least 20 mu m; and growing graphene on the copper-based thin metal film by providing heat and reacting a reaction gas including carbon to the copper-based thin metal film.