▎ 摘　　要

NOVELTY - The deposition method involves depositing a transition metal ALD layer by ALD method on an electronic product such as transistor (30) in an ALD reactor. A graphene ALD layer (12) is deposited on top of the transition metal ALD layer by ALD method using the transition metal ALD layer as a seed layer (11). The transition metal ALD layer is a copper layer or a platinum layer. USE - Deposition method for electronic product (claimed). Uses include but are not limited to transistor, such as two-dimensional field effect transistor (FET), or three-dimensional transistor such as Fin-shaped FET (FinFET) or high electron mobility transistor (HEMT), nanowire or quantum dot transistor, nano-sized memory, organic light-emitting diode (OLED) display or electrochromic display, photonic device such as detector, modulator and Terahertz device, and sensor such as touch sensor. ADVANTAGE - Provides industrial high-volume manufacturing method of electronic products with high mobility requirements. Provides improved method of depositing graphene for electronic devices. Eliminates need to first grow graphene on the foil and only then transfer on the device. Allows producing transistor or another electronic product directly on three-dimensional (3D) substrate. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) an electronic product; and (2) an ALD reactor. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the electronic product. Seed layer (11) Graphene ALD layer (12) Transistor (30) Gate dielectric (31) Gate (32)