▎ 摘　　要

NOVELTY - The non-volatile memory device (100) comprises a tunnel insulating layer (120) that is formed on a substrate (110). A gate electrode (150) is formed on a control insulating layer (140) formed on the graphene quantum dot layer (130) and is equipped with a tunnel insulating layer. The substrate is made of the p or n type silicone. A channel membrane is arranged between the substrate and tunnel insulating layer, and is made of gallium nitride, pentacene, polyenes vinylcarbazole and polystyrene or zirconium oxide. The memory device is made of poly p-phenylene pyromellitimide and graphene. USE - Non-volatile memory device for use in a digital camera or a pocket telephone. ADVANTAGE - The gate electrode is formed on a control insulating layer formed on the graphene quantum dot layer and is equipped with a tunnel insulating layer, and thus enhances the processing efficiency of the non-volatile memory device, ensures the miniaturization of the non-volatile memory device, and hence ensures the simplification in the structure of the non-volatile memory device. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for manufacturing a non-volatile memory device. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a non-volatile memory device. Non-volatile memory device (100) Substrate (110) Tunnel insulating layer (120) Graphene quantum dot layer (130) Control insulating layer (140) Gate electrode (150)