▎ 摘　　要

NOVELTY - The laser has an SOI structure whose top is provided between a ridge silicon waveguide and an end of a graphene layer, where width of the ridge silicon waveguide is about 2 to 5 mu and length of the graphene layer is about 5 to 150 microns. An epitaxial wafer is formed in an end of an epitaxial piece i.e. blue shift area. A middle part of the epitaxial piece is located in a transverse injection region that is electrically isolated with the ridge silicon waveguide. A window is connected with the ridge silicon waveguide, a front metal electrode and a back metal electrode. USE - Graphene bonding saturated absorbing body mode-locked laser. ADVANTAGE - The laser is inexpensive, easy to integrate and easy to implement, has simple processing techniques, high reliability and stable performance, and occupies less space and reduces power consumption. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional perspective view of a graphene bonding saturated absorbing body mode-locked laser.