• 专利标题:   Transferring graphene deposited on substrate to another substrate for e.g. micro and nanelectronic industry involves obtaining system comprising graphene, layer of doped silicon carbide and polymeric layer and applying potential.
  • 专利号:   WO2018122433-A1, ES2677157-A1
  • 发明人:   RIUS SUNE G, GODIGNON P, VILLA SANZ R, PRATS ALFONSO E, SUNE G, SANZ R, ALFONSO E
  • 专利权人:   CONSEJO SUPERIOR INVESTIGACIONES CIENTIF, CENT INVESTIGACION BIOMEDICA EN RED CIBE, CENT INVESTIGACION BIOMEDICA EN RED CIBE
  • 国际专利分类:   B82Y030/00, B82Y040/00, C01B032/19, H01B001/04
  • 专利详细信息:   WO2018122433-A1 05 Jul 2018 C01B-032/19 201849 Pages: 26 Spanish
  • 申请详细信息:   WO2018122433-A1 WOES070851 27 Dec 2017
  • 优先权号:   ES031701

▎ 摘  要

NOVELTY - A graphene deposited on substrate consisting of layer of doped silicon carbide is transferred to another substrate by (a) obtaining greater than or equal to 1 system comprising graphene, layer of doped silicon carbide and polymeric layer where graphene is deposited between doped silicon layer and polymeric layer, (b) applying potential of 6-20 V between cathode and anode of electrochemical cell where system acts as cathode and electrode of reference acts as anode and electro-chemical solution contains water and electrolyte, (c) depositing system on substrate of interest where graphene is deposited between polymeric layer and substrate of interest, (d) eliminating polymer layer of system by dissolution with the proviso that substrate of interest is insoluble in dissolution of stage (d). USE - Transferring graphene deposited on substrate to another substrate for micro and nanelectronic industry and optics and photonics. ADVANTAGE - Electric current flows between electrodes and bubbling does not take place.