▎ 摘　　要

NOVELTY - Preparing five-layer graphene comprises providing chemical vapor deposition system as growth preparation system and cobalt-nickel alloy foil as growth substrate to grow large area four to six layers graphene with an average thickness of five layers, placing cobalt-nickel alloy foil as growth substrate in center of a quartz tube, and placing the quartz tube in a resistance wire tube furnace, and growing five-layer graphene on the growth substrate by chemical vapor deposition system, where the gas source used to grow graphene is methane, ethylene or acetylene and hydrogen, and the growth temperature is 900-1050 degrees C, the growth time is 30-600 minutes, the system pressure is from 0.1 Torr to atmospheric pressure. USE - The method is useful for preparing five-layer graphene.