• 专利标题:   Method for calculating cut-off frequency of small signal model of graphene transistor, involves obtaining cut-off frequency of MOSFET, and establishing feedback modification small signal equivalent model.
  • 专利号:   CN105224717-A, CN105224717-B
  • 发明人:   LU N, LIU M, WANG W, XU G, LI L, WANG L
  • 专利权人:   INST MICROELECTRONICS CHINESE ACAD SCI, INST MICROELECTRONICS CHINESE ACAD SCI
  • 国际专利分类:   G06F017/50
  • 专利详细信息:   CN105224717-A 06 Jan 2016 G06F-017/50 201606 Pages: 13 English
  • 申请详细信息:   CN105224717-A CN10560088 06 Sep 2015
  • 优先权号:   CN10560088

▎ 摘  要

NOVELTY - The method involves forming a MOSFET with graphene material. The MOSFET is formed in an active region area. The active region area is formed with a source leakage metal contact. Stop frequency of the MOSFET is detected. A contact capacitor is connected between a small signal module and the active region area. A Fresnel-Kirchhoff current law (KCL) and Kirchhoff voltage law (KVL) analysis method is used to obtain cut-off frequency of the MOSFET, and a feedback modification small signal equivalent model is established. USE - Method for calculating cut-off frequency of a small signal model of a graphene transistor. ADVANTAGE - The method enables performing small signal model graphene transistor cut-off frequency calculating process in reasonable, simple and easy manner with better accuracy. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a method for calculating cut-off frequency of a small signal model of a graphene transistor. '(Drawing includes non-English language text)'