▎ 摘　　要

NOVELTY - Schottky junction solar cell comprises a back electrode laminated in sequence, an n-type doped gallium arsenide substrate with a nano-cone surface, a hole transport layer, a graphene conductive layer and a front electrode, where the nano-concentration surface is provided with an n-type gallium arsenide substrate and a gallium arsenide nanosheet array. The n-type gallium arsenide substrate is disposed on the back electrode. USE - Gallium arsenide nano cone array Schottky junction solar cell. ADVANTAGE - The gGallium arsenide nano-cone array Schottky junction solar cell provides a gradient change of the refractive index, effectively reduces the light reflection caused by the incontinuous refraction index of the air/gallium arsenide solar cell interface, it has the function of anti-reflection film and saves the antireflection film. It simplifies the structure and reduces the influence of the angle of the incident light to the absorption rate. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation of the solar cell comprising preparing back electrode on the n-type doped gallium arsenide substrate surface, etching the nano cone structure on the other surface the substrate, and obtaining back electrode/n-type gallium arsenide substrate/gallium arsenide nano cone array; depositing a hole transport layer; transferring the graphene to the cavity transmission layer; and preparing the front electrode on the graphene.