▎ 摘　　要

NOVELTY - A silicon substrate is put in the reaction chamber of a chemical vapor deposition system. The chamber is heated, propane is flown, and a carbon layer is grown on the substrate. The reaction chamber is heated, propane and silane are supplied, and silicon carbide layer is grown. A silica layer is formed as a mask and coated with a photoresist. A device is carved on the substrate, and silicon carbide is reacted with carbon tetrachloride to form a carbon film. A copper film is plated on the carbon film and annealed to form graphene, which is then patterned. USE - Copper film annealing preparation of silicon substrate patterned graphene for semiconductor elements. ADVANTAGE - The method enables preparation of silicon substrate patterned graphene with high yield and uniform distribution. The obtained product can be prepared into semiconductor elements by electrodeposition and other steps without etching. DETAILED DESCRIPTION - A 4-12-inch silicon substrate is cleaned and put into the reaction chamber of a chemical vapor deposition system at 10-7 mbar. Under hydrogen protection, the temperature of reaction chamber is increased to 900-1100 degrees C, propane is flown at 40 ml/minute, and a carbon layer is grown on the substrate for 3-8 minutes. The reaction chamber is heated to 1100-1250 degrees C, propane and silane are supplied for 35-70 minutes, and a layer of silicon carbide (3C-SiC) is heteroepitaxially grown on the substrate. The temperature is gradually reduced to room temperature under hydrogen protection. A silica layer of thickness 0.5-1 mu m is formed as a mask on the silicon carbide layer by plasma-enhanced chemical vapor deposition. The silica mask surface is coated with a layer of photoresist and a device is carved on the substrate with shape same as that of the mask to expose silicon carbide in a shape same as that of window image. The patterned substrate is set in a quartz tube and heated to 800-1000 degrees C. A bottle with carbon tetrachloride liquid is heated to 60-80 degrees C and argon gas is filled. Silicon carbide is reacted with carbon tetrachloride carried by argon gas for 30-120 minutes, to form a carbon film. The carbon film is placed in buffer hydrofluoric acid solution and pattern other than silica is removed. A copper film is plated on the carbon film to a thickness of 200-300 nm. The arrangement is placed in argon gas and annealed at 900-1100 degrees C for 10-25 minutes to form graphene at image position. Graphene is then patterned using a ferric chloride solution to remove copper film.