▎ 摘　　要

NOVELTY - A nanosheet (100) comprises: a 2H-SiC layer (102) having a first surface and a second surface, where the first and second surfaces are opposed to each other; a first graphene layer (104) formed of 1-10 graphenes is disposed on the first surface; and a second graphene layer formed of 1-10 graphenes is disposed on the second surface. USE - As nanosheet for making article (claimed); also used in a wide range of applications such as electronic devices, superconductors, capacitors, fuel cells, electrochemistry, sensing, field emission, hydrogen storage, and other energy-related technologies. ADVANTAGE - The graphene-silicon carbide (SiC)-graphene (GSG) nanosheet has large-area growth of GSG nanosheets which is achieve via a simple and inexpensive process that is compatible with existing semiconductor (e.g. Si-based) manufacturing processes. The use of a bottom-up fabrication process offers precise control of the dimensions of the GSG nanosheets as well as their number density on a substrate. The GSG nanosheet provides good electronic and electrochemical properties. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) an article comprising: a substrate having a surface; and several nanosheets disposed on the surface of the substrate, each nanosheet comprising: a SiC layer having a first surface and a second surface, a first graphene layer formed of 1-10 graphenes being disposed on the first surface, and a second graphene layer formed of 1-10 graphenes being disposed on the second surface, where the density of nanosheets per unit area is at least 109 cm-2; and (2) making the article involving: placing a substrate in a chemical vapor reactor that contains a gas mixture; and heating the substrate at a temperature of 900-1250 degrees C such that several nanosheets are formed on a surface of the substrate, where the gas mixture comprises an inert gas, a silicon-containing gas, a carbon-containing gas, and hydrogen gas. DESCRIPTION OF DRAWING(S) - The figures shows schematic diagrams of the growth mechanism for graphene-silicon carbide nanosheets. Nanosheet (100) Silicon carbide layer (102) Graphene layer (104) Substrate (400)