▎ 摘　　要

NOVELTY - Forming a graphene device comprises: creating a foundation material on a substrate having a first crystallographic state or first amorphic state, resulting in the patterning of the foundation material into many regions on the substrate; causing the foundation material to adopt a favored crystallographic or a favored amorphic state; and forming at least a first graphene stack in a first region in the regions from the foundation material. Each region can be distinct from other regions in the regions. The graphene device comprises the graphene stack. USE - The method is useful for forming a graphene device. ADVANTAGE - The method limits the types of graphene-based components that can be integrated onto a single-substrate graphene-based device, which in turn, limits a broader integration of functions on a single-substrate graphene-based device. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for an electronic device fabricated using the method. DESCRIPTION OF DRAWING(S) - The figure shows a flowchart of an implementation of a method of manufacturing a heterogeneous graphene-based device including at least two types of graphene with varying electrical properties on a single-substrate device. Creating a patterned first foundation material (10-1) Depositing the first foundation material on a substrate and patterning the first foundation material (10-1a) Causing the first foundation material to adopt a first crystallographic state or a first favored amorphic state (10-2) Exposing the first foundation material to a heat source under inducement conditions (10-2a) Growing at least one respective first graphene stack in a first region of many regions of the patterned first foundation material (10-3)