▎ 摘　　要

NOVELTY - The method involves selecting crystal material. A heat-conducting adhesive tape is cut into two rectangular shapes. The crystal is placed between two adhesive surfaces of the heat-conducting adhesive tape. Large amount of layered two-dimensional crystal material is placed on the adhesive surface of the heat-conducting adhesive tape. A PDMS substrate with graphene is taken. A photo-generated carrier in the graphene is injected. A photo-generated carrier in the graphene is determined under a condition of the graphene. Exciton resonance absorption intensity of the tungsten disulfide is adjusted. USE - Method for modulating exciton resonance absorption of two-dimensional semiconductor material by graphene layer thickness. ADVANTAGE - The method enables improving photoelectric conversion rate, so as to improve device performance, and realizing the exciton resonance absorption intensity of the 2D semiconductor materials by changing the layer thickness of graphene. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a two-dimensional semiconductor material (Drawing includes non-English language text).