▎ 摘　　要

NOVELTY - The method involves preparing strip-shaped single-layer graphene (2) on a pre-treated silicon substrate by mechanical stripping method. A double-layer h-BN (3) is prepared. The double-layer h-BN is transferred to a single-layer graphene as a tunneling layer. A spin-coating is performed on a poly methyl methacrylate (PMMA). A designed ferromagnetic electrode shape is exposed by using an EBL system. The sample is placed into an electron beam/thermal evaporation composite coating system. A low melting point metal indium is pre-evaporated by thermal evaporation method as a buffer layer (4). A cobalt is evaporated as the ferromagnetic electrode layer by using electron beam. An indium/cobalt (In/Co) miscible alloy interface is formed by annealing under an argon (Ar) atmosphere. A spin injection efficiency is improved by non-destructive interface of the ferromagnetic electrode layer-buffer layer-tunneling layer. USE - Method for improving spin injection efficiency by using buffer layer. ADVANTAGE - The method is easy to implement, has low cost, and low operational difficulty and technical requirements, is conducive to large-scale industrial application, has very good versatility, and can be extended to other spintronic devices with tunneling layers to improve the spin injection efficiency of the device. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a spin electronic device prepared by method for improving spin injection efficiency by using buffer layer. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic illustration of the method for improving spin injection efficiency by using buffer layer. 1Si/SiO2 substrate 2Strip-shaped single-layer graphene 3Double-layer h-BN 4Buffer layer 51Ground electrode 52Injection electrode 53Detection electrode