▎ 摘　　要

NOVELTY - The process (100) involves depositing (102) metal on a surface of silicon carbide. The metal and the silicon carbide are heated (104) to cause the metals to react with a portion of the silicon carbide to form silicide regions extending into an unreacted portion of the silicon carbide and graphene between the silicide regions and the unreacted portion of the silicon carbide. The silicide regions are removed (106) to provide a silicon carbide structure having a highly irregular surface and a surface layer of graphene. USE - Process for forming high surface area graphene structure of super-capacitor (claimed) used with battery. Can also be used in sensor. ADVANTAGE - The graphene structures are provided with highly non-planar or rough surfaces that provide a relatively high surface area per unit volume or footprint, so that the super-capacitors can be quickly charged, without getting affected by charging and discharging than rechargeable batteries. DETAILED DESCRIPTION - The silicon carbide is initially in the form of a thin film of silicon carbide supported by a substrate. The metal includes nickel. The thin film of silicon carbide is patterned to form mutually spaced electrodes in the form of inter-digitated finger electrodes. A gel electrolyte is introduced into a region between the mutually spaced electrodes to form super-capacitor. INDEPENDENT CLAIMS are included for the following: (1) a structure of super-capacitor; and (2) a super-capacitor. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating the process for forming high surface area graphene structure. Process for forming high surface area graphene structure (100) Step for depositing metal on surface of silicon carbide (102) Step for heating metal and silicon carbide to cause metals to react with portion of silicon carbide to form silicide regions extending into unreacted portion of silicon carbide and graphene between silicide regions and unreacted portion of silicon carbide (104) Step for removing silicide regions to provide silicon carbide structure having highly irregular surface and surface layer of graphene (106) Step for determining whether porosity is sufficient or not (108)