▎ 摘　　要

NOVELTY - The method involves setting a photo-etching pattern on a mask plate. Part of a photoresist is removed through the photo-etching pattern. The mask plate is electroformed. A polymer film is coated evenly on the mask plate. A polymer film layer is cured. Pulse drilling is performed on the cured polymer film layer. A cone-type table hole with a cone angle is opened. The entrance of the hole is larger than the exit aperture. The cone angle is controlled within 30-120 degree. The remaining photoresist with a cleaning solution is removed. The laser opening residue is cleaned. The mask plate is dried to finish the preparation. The material of the polymer film layer is polyimide, polypropylene, polyethylene terephthalate or graphene. The cleaning solution uses hydrofluoroether. The mask plate adopts nickel, iron and cobalt. USE - Method for preparing composite mask plate in electronic device processing field. ADVANTAGE - The method adds the layer of high molecular low thermal expansion coefficient material bonded to the metal on the electroformed mask plate, reduces the thermal expansion of the electroforming mask plate, opens the through hole with the certain angle through the action of femtosecond laser, and solves the difficulty of controlling the angle while pursuing the thickness of electroforming. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating the method for preparing composite mask plate in electronic device processing field (Drawing includes non-English language text).