▎ 摘　　要

NOVELTY - Graphene semiconductor comprises: graphene; and a metal atomic layer disposed on the graphene (13). The metal atomic layer comprises a metal, which is capable of charge transfer with the graphene. USE - The graphene semiconductor is useful in an electrical device which is a sensor, a bipolar junction transistor, a FET, a heterojunction bipolar transistor, a single electron transistor, a LED, or an organic electroluminescent diode (all claimed). ADVANTAGE - The graphene semiconductor has a band gap without damaging the graphene lattice with economic and suitable process complexity, thus displaying semiconducting properties while retaining its unique properties, such as high mobility. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: (1) manufacturing the graphene semiconductor, comprising disposing graphene on a substrate (11) and disposing a metal atomic layer on the graphene to manufacture the graphene semiconductor; and (2) selecting a band gap of graphene, comprising disposing graphene on a substrate, disposing a metal atomic layer on the graphene and forming a first oxide layer on the graphene by oxidizing the metal atomic layer to select the band gap of the graphene. DESCRIPTION OF DRAWING(S) - The figure shows a schematic view of a field effect transistor. Substrate (11) Silica substrate (12) Metal atomic layer-containing graphene (13) Source electrode (14) Gate electrode (15)