▎ 摘　　要

NOVELTY - The method involves connecting four substrates with a polydimethylsiloxane film. A poly propylene carbon thin film is arranged on an h-BN thin film by the first substrate. A poly-propylene-carbon -h-BN graphite structure is arranged on the first substrate using the polydimethylsiloxane film. A graphene electrode is formed as the graphite structure. A structure section is arranged on a linear graphene edge and an h-BN-graphite-molybdenum-disulfide-h-BN section structure. A depositing metal is covered with the section structure. A one-dimensional graphene is connected with a metal electrode. USE - Graphene device structure contact electrode preparation method. ADVANTAGE - The method enables maintaining graphene carrier migration rate and absorbing oxygen, water, fine particles and air so as to increase electrical performance using graphene and greatly reduce contact resistance of a superconducting/semiconductor device. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a graphene device structure contact electrode.