▎ 摘　　要

NOVELTY - The device has a semiconductor substrate. A semiconductor light emitting layer (3) and dielectric material layer consist of light emitting element that is formed on the semiconductor substrate. A carbon nanotube layer or graphene layer is formed on the semiconductor and the dielectric material layer. The light emitting element has an electric current injection portion that is provided on the semiconductor light emitting layer. USE - Semiconductor light-emitting device used for optical distribution line. ADVANTAGE - The size of the device can be reduced and the manufacturing process can be simplified. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacturing method of semiconductor light-emitting device. DESCRIPTION OF DRAWING(S) - The drawing shows a front and top views of the semiconductor light-emitting device. (Drawing includes non-English language text) N-type-semiconductor layer (2) Semiconductor light emitting layer (3) P-type-semiconductor layer (4) Dielectric material (5) Laser beam (10)