▎ 摘　　要

NOVELTY - An indium-gallium nitride/gallium nitride multiple quantum well nanocolumn-grown silicon/graphene composite substrate comprises silicon/graphene composite substrate, n-doped gallium nitride nanocolumn grown on the silicon/graphene composite substrate, indium-gallium nitride/gallium nitride multiple quantum well grown on top of the n-doped gallium nitride nanocolumn, and p-doped gallium nitride nanocolumn grown on top of the indium-gallium nitride/gallium nitride multiple quantum well. USE - Indium-gallium nitride/gallium nitride multiple quantum well nanocolumn-grown silicon/graphene composite substrate. ADVANTAGE - The indium-gallium nitride/gallium nitride multiple quantum well nanocolumn-grown silicon/graphene composite substrate is prepared by simple and economical process, and has low defect density, and excellent crystal quality, electrical properties and optical properties. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation of the indium-gallium nitride/gallium nitride quantum well nanocolumn-grown silicon/graphene composite substrate.