▎ 摘　　要

NOVELTY - Process for depositing graphene or graphene oxide onto a substrate from a gaseous source of at least one carbon precursor, involves using a plasma-enhanced chemical vapor deposition method, where the carbon precursor consists of ethylene and in that the process is carried out at 18-40° C and in the absence of carrier gas. USE - The process is useful for depositing graphene or graphene oxide onto a substrate from a gaseous source of at least one carbon precursor. ADVANTAGE - The process uses ethylene, which is a non-harmful gas, and is conducted at a temperature around room temperature, and consumes less energy, and is suitable directly applied to a diversity of substrates, and allows omitting any prior step of treating the substrate, for instance by cleaning with a plasma, and grows high quality, and large area graphene, for instance products of about 15x 15 cm2or even 100 cm2or 200 cm2, and the device is economical, and does not require a furnace. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a device suitable for the production of graphene or graphene oxide on a substrate, comprising a container comprising a gaseous source of carbon precursors consisting of ethylene, a plasma reactor comprising a plasma chamber comprising a sample stand suitable for holding a substrate, and a plasma generator comprising a power source and connected to, or including, the plasma chamber, and a pumping system suitable for putting the plasma chamber under vacuum and in fluid communication with the plasma chamber, and for feeding ethylene from the container into the plasma chamber.