• 专利标题:   Graphene fuse device for one-time programmable memories, comprises substrate, source electrode and drain electrode provided at ends of graphene film, metal gate, gate oxide layer, and gate window formed between source and drain electrodes.
  • 专利号:   CN114582876-A
  • 发明人:   PENG L, QIU C, LI X
  • 专利权人:   BEIJING YUANXIN CARBONBASED INTEGRATED, UNIV XIANGTAN
  • 国际专利分类:   H01L021/8246, H01L027/112
  • 专利详细信息:   CN114582876-A 03 Jun 2022 H01L-027/112 202264 Chinese
  • 申请详细信息:   CN114582876-A CN10245614 14 Mar 2022
  • 优先权号:   CN10245614

▎ 摘  要

NOVELTY - A graphene fuse device comprises a substrate, a graphene film provided on the substrate, a source electrode and a drain electrode provided at ends of the graphene film, a gate window formed between the source electrode and the drain electrode, a metal gate provided in the gate window, and a gate oxide layer provided between the metal gate and the graphene film. USE - Graphene fuse device for use in one-time programmable memories such as field programmable gate array (FPGA) and programmable ROM (PROM) for high-reliability aerospace and military applications. ADVANTAGE - The device is economically prepared by a simple process, has large area, changes from a low-resistance state to a high-resistance state with greater resistance, and ensures low power consumption by reducing programming current and programming voltage to 4 V. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation of graphene fuse device.