• 专利标题:   Producing silicon carbide sheets useful in producing high heat dissipation polymer composite for electronic product i.e. electronic circuit, comprises reducing graphene oxide, and synthesizing silicon carbide sheets from graphene sheets.
  • 专利号:   KR2020004192-A, KR2098090-B1
  • 发明人:   KIM S, VU M
  • 专利权人:   UNIV KOREA NAT TRANSPORTATION IACF
  • 国际专利分类:   C01B032/184, C01B032/956, C08J005/00
  • 专利详细信息:   KR2020004192-A 13 Jan 2020 C01B-032/956 202012 Pages: 12
  • 申请详细信息:   KR2020004192-A KR077307 03 Jul 2018
  • 优先权号:   KR077307

▎ 摘  要

NOVELTY - Producing silicon carbide (SiC) sheets, comprises (a) reducing graphene oxide (GO) to prepare graphene sheets, and (b) synthesizing SiC sheets from the graphene sheets. USE - The SiC sheets are useful in producing high heat dissipation polymer composite (claimed) for electronic product i.e. electronic circuit. ADVANTAGE - The method provides vertically arranged SiC sheets from vertically arranged graphene. The SiC sheets provide polymer composite in which thermal conductivity in thickness direction (surface direction of the SiC sheet) is dramatically increased by using SiC sheets arranged vertically as fillers of polymer composite material. The polymer composite has excellent thermal conductivity and low electrical conductivity as compared with composite including carbon-based filler, prevents malfunction and improves durability of electronic circuit. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: (1) SiC sheets produced by the above method; and (2) high heat dissipation polymer composite comprising matrix resins and SiC sheets. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic representation of the method of producing SiC sheets.