▎ 摘　　要

NOVELTY - The complementary memory has a bottom electrode array formed on the substrate (200), and including multiple linear bottom electrodes (202) extending in a first direction and arranged in a second direction. The first boron nitride (BN) 2D material layer is formed on the bottom electrode array. A graphene 2D material layer is formed on the first BN 2D material layer. The second BN 2D material layer (205) is formed on the graphene 2D material layer. The top electrode array includes multiple linear top electrodes (206) that extend along the second direction and are arranged along the first direction. The first direction is perpendicular to the second direction. The material of the linear bottom electrode and the linear top electrode is silver or copper. USE - Two-dimensional (2D) complementary memory used in field of semiconductor technology. ADVANTAGE - The complementary memory uses an independent complementary memory to solve the sneak current problem in the cross array. The choice of materials is increased, and the van der Waals heterojunction constructed from full 2D materials is used as the functional layer of the complementary memory, which can be reduced to an atomic level, effectively improving the high-density integration capability of the 2D memory. The excellent flexibility of 2D materials provides a new choice for the further development of flexible high-density storage devices. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for preparing two-dimensional complementary memory. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of a 2D complementary memory. Substrate (200) Mark (201) Linear bottom electrode (202) Second BN 2D material layer (205) Linear top electrode (206)