▎ 摘　　要

NOVELTY - A silicon carbide sample is cleaned. An injection region is chosen on the cleaned sample and silicon ions are injected. The sample is put in an epitaxial furnace and heated. The temperature is maintained constant for 30-90 minutes and the sample is pyrolyzed in the injection region to form a carbon film. A nickel film is deposited by electron beam on a silicon substrate. The carbon film is placed on the nickel film, and the carbon film and nickel film are annealed in argon gas to attach carbon film to nickel film on the formed graphene nanobelt. USE - Preparation of graphene nanobelt for use in manufacture of microelectronic devices. ADVANTAGE - The method enables simple and safe preparation of graphene nanobelts at reduced pyrolysis temperature. The obtained graphene nanobelt has excellent surface smoothness and continuity. DETAILED DESCRIPTION - A silicon carbide sample is cleaned to remove surface contaminants. An injection region is chosen on the cleaned sample and silicon ions are injected at a pressure of (0.5-1)x 10-6 Torr, an injection energy of 15-30 keV, and a concentration of 5x 1014-5x 1017 cm-2. The sample is put in an epitaxial furnace and heated to 1200-1300 degrees C. The temperature is maintained constant for 30-90 minutes and the sample is pyrolyzed in the injection region to form a carbon film. A nickel film with a thickness of 350-600 nm is deposited by electron beam on a silicon substrate. The carbon film is placed on the nickel film, and the carbon film and nickel film are placed in argon gas and annealed for 10-20 minutes at 900-1200 degrees C, to attach carbon film to nickel film on the formed graphene nanobelt.