• 专利标题:   Preparation of monocrystalline copper foil used for growing two-dimensional large-sized graphene and boron nitride material, involves annealing metal element-doped polycrystalline copper foil.
  • 专利号:   CN105603514-A, CN105603514-B
  • 发明人:   LIU K, ZHANG Z, XU X
  • 专利权人:   UNIV PEKING
  • 国际专利分类:   C30B001/02, C30B025/18, C30B029/02
  • 专利详细信息:   CN105603514-A 25 May 2016 C30B-025/18 201652 Pages: 12 English
  • 申请详细信息:   CN105603514-A CN10098623 23 Feb 2016
  • 优先权号:   CN10098623

▎ 摘  要

NOVELTY - Preparation of monocrystalline copper foil involves annealing metal element-doped polycrystalline copper foil. The monocrystalline copper foil is monocrystalline copper(III) foil. USE - Preparation of monocrystalline copper foil used for growing two-dimensional large-sized graphene and boron nitride material (all claimed). ADVANTAGE - The method provides monocrystalline copper foil by simple and economical process. The two-dimensional large-sized graphene obtained using the monocrystalline copper foil has high quality. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for large-sized monocrystalline graphene.