• 专利标题:   Method for integrating of thin film material, involves forming functional material layer on upper surface of graphene layer, forming rigid temporary substrate layer on upper surface of graphene layer, and forming temporary bonding glue layer on surface of rigid temporary substrate layer.
  • 专利号:   CN114975084-A
  • 发明人:   ZHANG M, XUE Z, JIANG H, TIAN Z, LIU G, DI Z
  • 专利权人:   SHANGHAI INST MICROSYSTEM INFORMATION
  • 国际专利分类:   H01L021/02
  • 专利详细信息:   CN114975084-A 30 Aug 2022 H01L-021/02 202282 Chinese
  • 申请详细信息:   CN114975084-A CN10604165 31 May 2022
  • 优先权号:   CN10604165

▎ 摘  要

NOVELTY - The method involves (i) providing a substrate, and forming a graphene layer on an upper surface of the substrate; (ii) forming a functional material layer on the upper surface of the graphene layer; (iii) forming a rigid temporary substrate layer on the upper surface of the graphene layer; (iv) forming a temporary bonding glue layer on the surface of the rigid temporary substrate layer; (v) bonding the rigid temporary substrate layer with the functional material layer; and (vi) transferring the laminated structure to a target substrate, removing the rigid temporary substrate layer, and leaving the functional material layer on the surface of the target substrate. USE - Method for integrating of thin film material. ADVANTAGE - The method uses rigid temporary substrate, which is good for reducing the deformation of the functional material layer in the process, realizing the wafer level alignment integration with the target substrate. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for the method of claim. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating the method for integrating of thin film material (Drawing includes non-English language text).