▎ 摘　　要

NOVELTY - Graphene is prepared by warming a substrate in non-oxide environment at 800-1200 degrees C for 10-20 minutes, maintaining the temperature, filling carbon source and hydrogen in the reactor, reacting on the substrate by chemical vapor deposition, closing the carbon source after reacting, and cooling at room temperature in the non-oxide environment. USE - Method for preparing graphene used in preparing a transparent conductive electrode or a graphene device (claimed). ADVANTAGE - The graphene is grown on the quartz substrate for a high-property transparent conductive electrode. It is grown on the silicon substrate with silicon dioxide for an electronic device assembly without transferring in simple technique. The method is compatible with the prior semiconductor industry.