▎ 摘　　要

NOVELTY - The graphene deposition process involves placing a substrate into a deposition chamber. The substrate is a metal, an insulator or a semiconductor. The chamber is heated to a temperature of 550-650 degrees Celsius. A radio frequency plasma is generated at a location proximate to the substrate while flowing a precursor gas containing carbon through the plasma and over the substrate. USE - Graphene deposition process for deposition of graphene on substrates. ADVANTAGE - The deposition process implements facile graphene integration into commercial devices, by reducing the growth temperature which increases the potential substrates and avoid the necessity of the transfer operation from a catalyst to the substrate. The deposition process uses higher temperatures which result in higher grain sizes which in turn result in a smaller number of grain boundaries, thus achieving a more efficient current density once the graphene is used in an electronic device. DESCRIPTION OF DRAWING(S) - The drawing shows the graphical view of a Raman spectroscopy output of intensity versus Raman shift which depicts different growth periods of graphene on silicon dioxide.