▎ 摘　　要

NOVELTY - Graphene is grown on one side copper foil surface, then chlorobenzene solution of poly(methyl methacrylate) is coated on other side of copper foil surface, plasma etched, and treated with sodium persulfate solution. Silicon wafer is coated with poly(methyl methacrylate) graphene and coated with silica, to obtain graphene and poly(methyl methacrylate) silicon wafer. Resultant wafer is plasma etched, to obtain graphene, poly(methyl methacrylate) and silicon dioxide nanoporous film. Resultant film is plasma etched, and treated with organic solvent, to obtain nano-graphene network. USE - Preparation of nano-graphene network (claimed). ADVANTAGE - The nano-graphene network is prepared by simple, economical and environmentally-friendly method. DETAILED DESCRIPTION - Graphene is grown on one side copper foil surface by chemical vapor deposition method, then 10-100 g/L chlorobenzene solution of poly(methyl methacrylate) is coated on other side of copper foil surface, dried, plasma etched, washed, and etched product is placed in 15-19 g/L sodium persulfate solution. A silicon wafer is cleaned using deionized water, then coated with poly(methyl methacrylate) graphene, dried, and coated with silica, to obtain graphene and poly(methyl methacrylate) silicon wafer. Resultant wafer is plasma etched for 30-50 seconds, washed with deionized water, and dried, to obtain graphene, poly(methyl methacrylate) and silicon dioxide nanoporous film. Resultant film is plasma etched for 100-180 seconds, and treated with organic solvent to remove overlying poly(methyl methacrylate) and double-pass titanium dioxide nanoporous film, to obtain nano-graphene network. The nano-graphene network has thickness of 0.5-1.5 nm and hole diameter of 60-80 nm. The structure of nano-graphene network is hexagonal nanopourous network.