▎ 摘　　要

NOVELTY - Light-emitting diode with enhanced light emitting efficiency has a substrate and an epitaxial layer arranged on the substrate. A roughened gallium dioxide layer is arranged on one side of the epitaxial layer away from the surface. The gallium oxide layer is provided with a current expansion layer and a high-doped gallium nitride layer, where the thickness of the high doped graphene layer is 300-500 angstroms. The silicon dioxide medium layer and metal mirror surface layer are arranged in sequence on the surface of the surface layer of the gallium phosphide layer to perform roughening treatment, so that the metal reflector surface layer does not need to form an ohmic contact with the surface layer through the high-temperature annealing process. USE - The light emitting diode is used as a light source illuminating lamp in an illumination and display industry. ADVANTAGE - The light emitting diode enhances the light emitting efficiency. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparing light emitting diode with enhanced light emitting efficiency. DESCRIPTION OF DRAWING(S) - The drawing shows a structural diagram of a light emitting diode for enhancing light emission efficiency (Drawing includes non-English language text). Substrate (100) Epitaxial layer (200) Gap layer (300) Silicon dioxide dielectric layer (400) Metal mirror layer (500)