• 专利标题:   Preparing graphene or graphite film used in e.g. electronic devices, by using high-temperature substrate, cooling in liquid carbon source, and growing graphene or graphite film on surface of substrate using cracking of liquid carbon source.
  • 专利号:   CN110745812-A
  • 发明人:   REN W, ZHAO T, ZHOU T, XU C, CHENG H
  • 专利权人:   INST METAL RES CHINESE ACAD SCI
  • 国际专利分类:   C01B032/184, C01B032/205
  • 专利详细信息:   CN110745812-A 04 Feb 2020 C01B-032/184 202018 Pages: 16 Chinese
  • 申请详细信息:   CN110745812-A CN10965036 11 Oct 2019
  • 优先权号:   CN10965036

▎ 摘  要

NOVELTY - Method for preparing graphene or graphite film, involves using a high-temperature substrate, rapidly cooling in a liquid carbon source by quenching under the protection of a gas, and growing graphene or graphite film on the surface of the substrate using cracking of the liquid carbon source during the quenching process. USE - The method is useful for preparing graphene or graphite film used in electronic devices, optoelectronic devices, electrochemical energy storage, anti-corrosion and wear-resistant coatings, high-strength and high-conductivity composite materials, transparent conductive films, electromagnetic shielding electromagnetic shielding thermal management and thermal power application. ADVANTAGE - The method has simple preparation process, high efficiency and excellent controllability, and is economical manner.