▎ 摘　　要

NOVELTY - Graphene is prepared on silicon dioxide/silicon (SiO2/Si) substrate by using ion implantation method for preparing transition metal ion on SiO2/Si substrate and sequentially removing graphene and transition metal film (2) from surface of transition metal film. USE - Preparation of graphene on silicon dioxide/silicon substrate (claimed). ADVANTAGE - Production efficiency is improved, preparation process is low cost, stable, high strength, and large uniform beam of carbon ions are obtained, and graphene film has low defect level and high quality. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of graphene prepared on silicon dioxide/silicon substrate. (Drawing includes non-English language text). Graphene film layer (1) Transition metal film (2) Silicon dioxide layer (3) Silicon layer (4)