▎ 摘　　要

NOVELTY - The method involves forming a lower graphene layer (110) between a substrate and a lower compound semiconductor layer. An upper compound semiconductor layer is formed on the lower graphene layer. The oxidation process and the thermal process are performed to the lower graphene layer. The lower compound semiconductor layer is separated from the upper compound semiconductor layer. USE - Method for manufacturing compound semiconductor device. ADVANTAGE - The crystal defect of the semiconductor can be reduced. The luminous efficiency of the semiconductor device can be improved. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the compound semiconductor device. Substrate (100) Graphene layer (110)