▎ 摘　　要

NOVELTY - Graphene magnetoresistive sensor comprises a first electrode layer, a graphene resonance layer, and a second electrode layer stacked in sequence. The first side of the graphene resonance layer contacts the first electrode layer. The second side of the graphene resonance layer contacts the second electrode layer, where the first side is opposite to the second side. Both the first electrode layer and the second electrode layer are ferromagnetic layers, and there are spin-up electrons and spin-down electrons in both the first electrode layer and the second electrode layer. The translation amount of the spin-down electrons in the first electrode layer and the second electrode layer to the graphene resonance layer is greater than the translation amount of the spin-up electrons in the first electrode layer and the second electrode layer to the graphene resonance layer. The first electrode layer and the second electrode layer are not resonantly tunneled through the graphene resonant layer. USE - Graphene resistance sensor used in power industry field power operation device such as current measurement and fault position measurement and other scenes. ADVANTAGE - The first electrode layer and the second electrode layer do not resonate to tunnel through the graphene resonance layer under the condition that the magnetization direction of the first and second electrode layers are parallel to each other, so that the magnetic resistance change rate is large, thus improving the measuring sensitivity of the graphene resistance sensor. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for the following: (1) a method for measuring magnetoresistance, which involves obtaining the first electrical conductivity of the graphene resonance layer when the magnetization directions of the first electrode layer and the second electrode layer are parallel; and (2) a method for preparing a graphene magnetoresistive sensor, which comprises forming a first electrode layer, forming a graphene resonance layer on the first electrode layer, forming second electrode layer on the graphene resonance layer. DESCRIPTION OF DRAWING(S) - The drawing shows a structure schematic diagram of the graphene magnetoresistive sensor.