▎ 摘　　要

NOVELTY - The method involves generating the plasma which contains a radical from the source gas by applying a microwave on the periphery of an end or a periphery of the inside of the nozzle, and/or the nozzle. The source gas containing carbon-type gas is blown from a nozzle on the surface of a base material (5), so that the flow rate of the source gas is controlled. The surface of the base material is arranged to carry out the forced diffusion of the radical. The opening of the direction which requires electric field of microwave of nozzle is 1 mm or less. USE - Method for manufacturing graphene film used in electronic device. ADVANTAGE - The graphene film is produced without a defect on the self-growth arrest conditions of stopping at the number of layers of a graphene film regardless of the time of plasma processing. Thus, the industrial mass-producing method of the good-quality graphene film is provided with high productivity and reliability. DETAILED DESCRIPTION - The method involves setting the pressure mean free path of ion in plasma to which process is performed more highly than the pressure which becomes smaller than a debye lengh so that the ion bombardment from the plasma to the surface of the base material is decreased. The pressure to which the process is performed is set to 1 Torr or more. The microstrip line or strip line is used as a microwave transmission line. The graphene film is produced on the growth conditions of a self-growth arrest that the growth stops at the number of layers of a graphene film regardless of the processing time of the process. The continuous preparation of the graphene film is carried out by a roll-to-roll system by using the said base material as flexible base material. The film-forming roller which supports the flexible base material is provided, and the nozzle is put in multiple arrangement along the shape of the film-forming roller. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the microwave plasma chemical vapor deposition apparatus. (Drawing includes non-English language text) Plasma production region (1) Coaxial cable for microwave transmission (2) Microstrip line (3) Dielectric substrate (4) Base material (5)