• 专利标题:   Processing polycrystalline diamond body, involves placing electrode near diamond body such that gap is defined between electrode namely cathode, and diamond body namely anode, applying voltage between electrode and diamond body, pumping processing solution through electrode, towards diamond body.
  • 专利号:   US11535520-B1
  • 发明人:   CHAPMAN M P
  • 专利权人:   US SYNTHETIC CORP
  • 国际专利分类:   C01B032/26, C25C001/00, C25C007/00
  • 专利详细信息:   US11535520-B1 27 Dec 2022 C01B-032/26 202301 English
  • 申请详细信息:   US11535520-B1 US909838 23 Jun 2020
  • 优先权号:   US168902P, US909838

▎ 摘  要

NOVELTY - Processing a polycrystalline diamond body, involves: 1) positioning an electrode near a polycrystalline diamond body such that a gap is defined between the electrode and the polycrystalline diamond body comprising a metallic material disposed in interstitial spaces defined within the diamond body; 2) applying a voltage between the electrode and the polycrystalline diamond body, the electrode is a cathode and the polycrystalline diamond body is an anode; 3) pumping a processing solution to cause flow of the processing solution within an internal passage extending through the electrode, and cause discharge of the processing solution from the internal passage, towards the diamond body. The internal passage extending through the electrode, further extends into and along the gap. The processing solution is discharged at a flow rate of approximately 1- 100 l/minute. USE - Method is used for processing polycrystalline diamond materials. ADVANTAGE - The method enables leaching polycrystalline diamond materials, with improved efficiency.