▎ 摘　　要

NOVELTY - The method involves polishing and cleaning the stainless steel substrate, magnetron sputtering aluminum oxide (Al2O3) film on stainless steel substrate, obtaining the substrate sputtered with Al2O3, continuing to magnetron sputtering aluminum nitride (AlN) film on the Al2O3, obtaining substrate sputtered with AlN/Al2O3composite layer, growing porous graphene on the three-dimensional porous copper-nickel alloy substrate, depositing GaN film at high temperature, growing for a period of time to obtain substrate covering the GaN resistance layer film, performing selective dry etching to the gallium nitride (GaN) layer and porous graphene layer according to the designed pattern, performing selective dry etching to SiO2 protective layer until the GaN layer is exposed, performing metal evaporation on the exposed part of the GaN layer, forming an ohmic electrode contact and performing high temperature annealing alloying to the metal layer, and finishing the preparation of device. USE - The method is useful for preparing gallium nitride-based microelectromechanical system pressure sensor with porous graphene inserted layer structure. ADVANTAGE - The method: solves stripping; improves growth quality of gallium nitride epitaxial layer in existing stage; has small influence on II-II electron, and higher specific surface area than graphene; does not agglomerate phenomenon caused by II-II electron influence, so that the uniformity of material is better, so as to improve the resistance sensitivity of GaN material; has better mechanical performance; and is easy to peel MEMS pressure sensor from substrate. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic cross-sectional structure diagram of the GaN-based MEMS pressure sensor with a porous graphene intercalation layer structure (Drawing includes non-English language text).