▎ 摘　　要

NOVELTY - The structure has a first patterned layer of carbon-based nanostructure layer on substrate. A first patterned layer of a first metal is on first patterned carbon based-nanostructure layer. The spaced apart contacts have a portion on a patterned metal layer (14) and a portion on insulating substrate. The first patterned carbon-based nanostructure layer having regions are not covered by first patterned layer of a first metal. The carbon-based nanostructure layer consists of carbon-nanotubes and graphene. The first metal has nickel (Ni), palladium (Pd), amorphous silicon and polysilicon. USE - Device structure e.g. carbon nanotube (CNT) and graphene device structures for fabricating hall bars, gated hall bars, and field effect transistors (FET). ADVANTAGE - The gate electrode capacitance to source and drain is reduced. The sacrificial channel-protect layers are utilized to keep the CNT or graphene from being exposed to undesirable organic moieties present during resist processing steps. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for forming a device structure. DESCRIPTION OF DRAWING(S) - The drawing shows a top view of a device structure comprising an insulating base substrate, a carbon-based nanostructure layer on the base substrate and a metal layer on the carbon-based nanostructure layer. Lines (2) Metal layer (14)