▎ 摘　　要

NOVELTY - The silicon nitride ridge waveguide based embedded graphene photodetector has an isolation layer (102) whose material is silicon oxide. A light detection structure (300) is included with a ridge waveguide (103), a graphene layer (106) and an interdigital electrode structure. The material of the ridge waveguide is silicon nitride. The ridge waveguide is included with a base (104) and a ridge (105). The width of the base is greater than the width of the ridge. The graphene layer is located on the ridge waveguide base. A first metal layer (107) and a second metal layer (108) that are in contact with the graphene layer are arranged on the graphene layer. The first metal layer and the second metal layer are alternately placed along the waveguide transmission direction and arranged in an interdigitated manner, and extends to both sides of the ridge waveguide base to form an interdigital electrode structure. USE - Silicon nitride ridge waveguide based embedded graphene photodetector. ADVANTAGE - The detector has stronger interaction between the graphene layer and the guide mold, and obtain higher performance, and effectively avoids graphene layer breaking influence performance. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for manufacturing an embedded graphene photodetector based on a silicon nitride ridge waveguide. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-section and top view of the photodetector of silicon nitride ridge waveguide. Isolation layer (102) Ridge waveguide (103) Base (104) Ridge (105) Graphene layer (106) First metal layer (107) Second metal layer (108) Light detection structure (300)