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  • 专利标题:   Semiconductor layer manufacture for semiconductor device comprises providing crystalline substrate with diamond-type lattice and exposed substantially (111)-surface, and forming graphene-like layer on the exposed substantially (111)-surface.
  • 专利号:   US2009169919-A1, WO2009085167-A1, US7781061-B2
  • 发明人:   GARCIA J M, PFEIFFER L N
  • 专利权人:   GARCIA J M, PFEIFFER L N, ALCATELLUCENT USA INC, ALCATELLUCENT USA INC
  • 国际专利分类:   B32B009/04, H01L021/3205, H01L021/04, H01L029/786, B32B009/00, H01L031/0312
  • 专利详细信息:   US2009169919-A1 02 Jul 2009 B32B-009/04 200946 Pages: 9 English
  • 申请详细信息:   US2009169919-A1 US006155 31 Dec 2007
  • 优先权号:   US006155

▎ 摘　　要

NOVELTY - A semiconductor layer is made by providing crystalline substrate (12) with diamond-type lattice and exposed substantially (111)-surface, and forming graphene-like layer (14) on the exposed substantially (111)-surface. USE - Method for manufacture of semiconductor layer (claimed) for semiconductor device. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for an apparatus comprising crystalline substrate (12) with diamond-type lattice and substantially (111)-surface; and graphene-like layer (14) on the substantially (111)-surface. DESCRIPTION OF DRAWING(S) - The drawing is a cross-sectional view of a transistor. Substrate (12) Graphene-like layer (14) Planar surface (16) Transistor (18) Source electrode (22) Gate electrode (26)