专利标题: Growing P-type graphene comprises, at nitrogen-containing atmosphere, annealing silicon carbide substrate, and thermal decomposing.
专利号: CN105016328-A, CN105016328-B
发明人: CHEN X, GUO L, JIA Y, LU W, GUO Y
专利权人: CHINESE ACAD SCI PHYSICS INST
国际专利分类: C01B031/04, C01B032/184
专利详细信息: CN105016328-A 04 Nov 2015 C01B-031/04 201612 Pages: 12 Chinese
申请详细信息: CN105016328-A CN10171889 25 Apr 2014
优先权号: CN10171889
▎ 摘 要
NOVELTY - A P-type graphene is grown by, at nitrogen-containing atmosphere, annealing silicon carbide substrate, and thermal decomposing.
USE - Method for growing P-type graphene (claimed).
