▎ 摘　　要

NOVELTY - A nitride quantum dot modified graphene/zinc oxide nanotube array sensing material is prepared by heating zinc nitrate solution, cutting zinc foil, adhering left and right end with conductive glass insulating tape as access circuit electric deposition anode and cathode, depositing, taking out conductive glass, washing using deionized water, and drying; and dipping in potassium hydroxide solution, reacting, fumigating via water steam, naturally drying, transferring to 3-aminopropyltriethoxysilane in acetone solution, standing for 4-5 hours, rinsing using ethanol, and curing in drying box. USE - Method for preparing nitride quantum dot modified graphene/zinc oxide nanotube array sensing material used for environmental monitoring and chemical gas detector (claimed). DETAILED DESCRIPTION - A nitride quantum dot modified graphene/zinc oxide nanotube array sensing material is prepared by: (A) adopting two-electrode system, constant temperature heating 0.005 M zinc nitrate solution as electrolyte in water bath at 70-80 degrees C, cutting zinc foil, adhering left and right end with conductive glass insulating tape as access circuit electric deposition anode and cathode, depositing for 3-5 hours at 0.7-0.9 mA, taking out conductive glass, washing using deionized water, and drying; (B) dipping in 0.15-0.2 M potassium hydroxide solution, reacting under water bath condition at 70-80 degrees C for 1.5-2 hours to obtain zinc oxide nanotube array, fumigating via water steam for 20-40 hours, naturally drying, transferring to 3-aminopropyltriethoxysilane in acetone solution, standing for 4-5 hours, rinsing using ethanol, and curing in drying box at 100-110 degrees C for 30-40 minutes; (C) dipping in 0.2-0.3 wt.% carboxylated graphene oxide dispersion at 65-75 degrees C for 1.5-2.5 hours, drying to obtain zinc oxide nanotube array/graphene oxide film, steaming at 60-70 degrees C, reducing for overnight, placing into spin coater, spin coating dimethylsiloxane at speed of 500-700 revolutions/minute (rpm), and solidifying at 70 degrees C for 1.5-2.5 hours; (D) placing 1-2 g nitride quantum dot in mixed solution of 20-30.0 mL concentrated sulfuric acid and 20-30 mL concentrated nitric acid diluted with 0.9-1.1 L water, washing to obtain porous nitride quantum dot, dispersing 90-110 mL in 30-40 mL concentrated ammonia water, transferring to reaction kettle to react at 170-190 degrees C for 10-12 hours, cooling, washing precipitate to remove ammonia, ultrasonically dispersing 95-105 mg in 90-110 mL deionized water for 6 hours, centrifugally processing at speed of 6000-8000 rpm, and dialyzing to remove nanoparticle with large size to obtain nitride quantum dot; and (E) dripping in zinc oxide nanotube array/graphene surface once every 7-9 hours, placing for 20-28 hours and naturally drying.