• 专利标题:   Polycrystalline silicon film preparation method for organic electroluminescent display device, involves forming graphene layer and amorphous silicon layer, where amorphous silicon is crystallized to form polycrystalline silicon thin film.
  • 专利号:   CN102856173-A, EP2713401-A1, US2014091305-A1, JP2014072518-A, KR2014043021-A, CN102856173-B, EP2713401-B1, US9142409-B2, KR1602997-B1, JP6192402-B2
  • 发明人:   SUN T
  • 专利权人:   BOE TECHNOLOGY GROUP CO LTD, BOE TECHNOLOGY GROUP CO LTD, BOE TECHNOLOGY GROUP CO LTD
  • 国际专利分类:   H01L021/20, H01L027/12, H01L027/32, H01L029/66, H01L029/786, H01L021/02, G02F001/1368, H01L021/205, H01L021/336, H01L031/04, G02F001/136, H01L029/04, H01L031/18
  • 专利详细信息:   CN102856173-A 02 Jan 2013 H01L-021/20 201331 Pages: 11 Chinese
  • 申请详细信息:   CN102856173-A CN10375067 29 Sep 2012
  • 优先权号:   CN10375067

▎ 摘  要

NOVELTY - The method involves forming a graphene layer and an amorphous silicon layer. The amorphous silicon is crystallized to form polycrystalline silicon and polycrystalline silicon thin film. USE - Method for preparation of polycrystalline silicon film in an organic electroluminescent display device (claimed). ADVANTAGE - The amorphous silicon is crystallized to form the polycrystalline silicon and the polycrystalline silicon thin film, thus increasing the carrier speed of the polycrystalline silicon thin film inner part. The polycrystalline silicon film exhibits low defect density and better surface flatness. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for the following: (1) a polycrystalline silicon thin film (2) an array baseplate comprising a thin film transistor array (3) an LCD device or an organic electroluminescent display device. DESCRIPTION OF DRAWING(S) - The drawing shows a crystalline representation of a polycrystalline silicon film.