▎ 摘　　要

NOVELTY - The method involves designing graphene semiconductor by varying the angular frequency and the effective dielectric constant of the plasmon medium with a resonator. The graphene semiconductor is integrated by generating a surface plasmon resonance phenomenon by changing a feeding direction of the plasmon medium to form a metamaterial. The graphene plasmon medium acts as an insulator when the effective permittivity of the graphene plasmon medium becomes high. USE - Graphene semiconductor design method using Doppler effect and plasmon resonance. ADVANTAGE - The graphene semiconductors can be integrated by applying surface plasmon resonance phenomenon. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view illustrating the graphene semiconductor design method. (Drawing includes non-English language text)