▎ 摘　　要

NOVELTY - The transistor has a channel layer that comprises a graphene layer and hexagonal boron nitride sheets dispersed in the graphene layer. The arrangement directions of the hexagonal boron nitride sheets are aligned. A gate stack on the channel layer is obtained. A source/drain region next to the gate stack is obtained. A first hexagonal boron nitride layer and a second hexagonal boron nitride layer are arranged on two opposite sides of the channel layer, and the second hexagonal boron nitride layer is located at the gate between the pole stack and the channel layer. The source/drain region is in physical contact with the second hexagonal boron nitride layer and physically separated from the channel layer by the second hexagonal boron nitride layer. USE - Transistor for semiconductor device. ADVANTAGE - The hexagonal boron nitride (hBN) sheet is formed on the single crystal copper film to form the graphene layer filling the space between the hBN sheets, thus the semiconductor device in a simple and cost-effective manner is formed, and the performance of the transistor is improved. The graphene layer is deposited on the copper film to wrap the hexagonal boron nitride sheet to form a hexagonal boron nitride carbon (hBNC) layer, and the gate stack is located on the channel layer, so that the source/drain regions are located beside the gate stacks, thus the parasitic capacitance between the source and drain regions is reduced, and the leakage current of the device is reduced, and the reliability of the transistors is improved effectively. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) a manufacturing method of hexagonal carbon boron nitride layer; (2) a method for manufacturing a semiconductor device. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the transistor for semiconductor device.