▎ 摘　　要

NOVELTY - Graphene-based LED epitaxial growth method, involves sequentially depositing silicon-doped n-type gallium nitride layer, MQW active layer, p-type aluminum gallium nitride layer and magnesium-doped p-type gallium nitride layer on sapphire deposited graphene film, cooling to 700-800 degrees C, heat-preserving for 20-30 minutes, turning off the heating system and cooling in the oven. USE - Graphene-based LED epitaxial growth method (claimed). ADVANTAGE - Graphene-based LED epitaxial growth method is efficiently carried out with high epitaxial crystal quality, and photoelectric performance of LED is improved. DETAILED DESCRIPTION - Graphene-based LED epitaxial growth method, involves growing graphene film layer (I) having thickness of 20-30 nm on a sapphire substrate by plasma enhanced chemical vapor deposition (PECVD) method at reaction chamber temperature of 800-950 degrees C, reaction chamber pressure of 850-1000 mtorr and RF power of 50-80 W in the hydrogen flow of 1000-1500 sccm, methane flow of 600-900 sccm and argon flow of 1000-1200 sccm, maintaining the reaction chamber temperature at 800-950 degrees C, reaction chamber pressure of 850-1000 mtorr and RF power of 50-80 W, growing graphene film layer (II) with thickness of 20-30 nm, reducing hydrogen flow rate from 1000-1500 sccm to 800-950 sccm, increasing methane flow rate from 600-900 sccm to 950-1100 sccm, removing sapphire deposited with two graphene films from PECVD reaction chamber, placing in reaction chamber, sequentially depositing silicon-doped n-type gallium nitride layer, MQW active layer, p-type aluminum gallium nitride layer and magnesium-doped p-type gallium nitride layer on sapphire deposited graphene film, cooling to 700-800 degrees C, heat-preserving for 20-30 minutes, turning off the heating system and cooling in the oven.