• 专利标题:   Hydrogen sensor for sensing low-concentration hydrogen gas with high sensitivity with low power and small size, has electrodes formed on substrate, and graphene layer is formed between electrodes to be spaced apart from electrodes.
  • 专利号:   KR2022082410-A
  • 发明人:   HEO J, AHN J H
  • 专利权人:   UNIV AJOU IND ACAD COOP FOUND
  • 国际专利分类:   G01N027/30, G01N027/411, G01N027/416
  • 专利详细信息:   KR2022082410-A 17 Jun 2022 G01N-027/411 202257 Pages: 18
  • 申请详细信息:   KR2022082410-A KR172297 10 Dec 2020
  • 优先权号:   KR172297

▎ 摘  要

NOVELTY - The sensor has electrodes formed on a substrate (101). A graphene layer (107) is formed between the electrodes, and spaced apart from the electrodes. Platinum structures are formed on the graphene layer, and a third electrode is electrically connected to a graphene layer. The graphene layer includes multiple irregular regions in which carbon atoms are arranged in a non-hexagonal lattice structure. The irregular regions are formed with a period greater than a lattice period of hexagonal lattices of the carbon atoms of the graphene layers. The platinum structures are in contact with an upper surface of graphene layer with a thickness of 1-10 nanometers. USE - Hydrogen sensor for sensing low-concentration hydrogen gas with high sensitivity with low power and small size for use in an aerospace field, a hydrogen vehicle and a fuel cell. ADVANTAGE - The sensor senses low-concentration hydrogen gas with high sensitivity with low power and small size, so that manufacturing cost of the sensor can be reduced. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for manufacturing a hydrogen sensor. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view and schematically illustrates a hydrogen sensor. Substrate (101) Graphene layer (107) Gate electrode (113) Hydrogen Sensor (200) Island-shaped structure (209)