• 专利标题:   Anti-electrostatic resin floor comprises one side layer comprising graphene and one bottom layer.
  • 专利号:   CN105525739-A
  • 发明人:   LAN P, ZHANG B
  • 专利权人:   SHANGHAI JIAFU NEW MATERIAL TECHNOLOGY
  • 国际专利分类:   C08K003/04, C08L009/02, E04F015/10, E04F015/18
  • 专利详细信息:   CN105525739-A 27 Apr 2016 E04F-015/10 201659 Pages: 7 English
  • 申请详细信息:   CN105525739-A CN10161418 07 Apr 2015
  • 优先权号:   CN10161418

▎ 摘  要

NOVELTY - Anti-electrostatic resin floor comprises one side layer comprising 0.3-5 wt.% graphene and one bottom layer. USE - Used as anti-electrostatic resin floor. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for preparing anti-electrostatic resin floor comprising (a) plasticating rubber base resin of each layer, placing in a open rubber mixing machine, via thin plastic smelting of certain time, to obtain plasticity, (b) mixing separately in an internal mixer, mixing uniformly using refining machine for sheets, (c) placing the room temperature the face layer and bottom layer parking for 1-7 days, using matching agent disperse uniformly, where the middle layer parking for more than 7-9 days, where the bottom layer parking 1-7 days time, (d) adding vulcanization agent into surface layer, middle layer, bottom layer for molding for specified length, width, thickness, to obtain parison layer, (e) taking parison layer overlapped in turn, The layers were sequentially laminated parison, where the vulcanization on drum vulcanizing machine, curing the temperature is preferably between the curing process is completed foamed intermediate layer and simultaneously the layers is being integrally laminated.